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Hybrid bonding: Going for GOLD - News - Compound …
Dec 3, 2021 · Hybrid bonding provides attainable scaling for packaging of compound semiconductor devices in copper or gold . BY JOHN GHEKIERE FROM CLASSONE TECHNOLOGY
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You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.
Bosch steps up SiC chip production - News - Compound …
Feb 10, 2022 · In response to the ever-buoyant SiC device market, Germany-based Bosch has laid out plans to start volume production of its SiC power semiconductors.
A better face for the SiC MOSFET - News - Compound …
SiC MOSFETs with a V-grooved trench reduce on-resistance and trim switching losses. BY Kosuke Uchida AND TAKASHI TSUNO FROM Sumitomo Electric Industries
GaAs: The logical successor to CMOS - News - Compound …
BY GEOFFREY TAYLOR FROM POET TECHNOLOGIES. The end is in sight for the scaling of silicon CMOS. From the 1990s until the first few years of this millennia, simply shrinking the dimensions of silicon transistors − the only viable digital technology of the time − wrought improvements in performance that were big enough to keep pace with Moore's Law.
BelGaN acquires ON Semiconductor Belgium fab - News
Feb 18, 2022 · BelGaN Group BV has completed the acquisition of all shares of ON Semiconductor Belgium BV from the Onsemi group. The site in Oudenaarde (pictured above) will be transformed from silicon to GaN.BelGaN aims to become a leading 6 inch and 8 inch GaN automotive semiconductor foundry in Europe.
A Coherent plan for SiC - News - Compound Semiconductor
Oct 18, 2023 · Backed by substantial investment from two of the biggest names in power electronics, Coherent has a well-devised plan for expanding the quality and quantity of its SiC portfolio.
Researchers find way to 'hear' defects in hBN - News
An international research team led by NYU Tandon School of Engineering and KAIST (Korea Advanced Institute of Science and Technology) has pioneered a new technique to identify and characterise atomic-scale defects in the 2D compound …
Transphorm reveals first 1200V GaN-on-sapphire model
May 9, 2023 · Transphorm has announced availability of its 1200 V GaN-on-sapphire power FET simulation model and preliminary datasheet. The TP120H070WS FET is thought to be the only 1200 V GaN-on-sapphire power semiconductor introduced to date, making its model the first of …