EDN

IGBT with Reverse Recovery Diode

Toshiba Electronics Europe has expanded its family of compact, integrated IGBTs with a high-speed switching device that will simplify the design and reduce the component count in cooking appliances ...
Seeking Alpha

ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF ...

Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes (SBDs) that deliver industry-leading[1] reverse ...
EDN

600-V MOSFETs pack fast recovery diode

Two 600-V N-channel super-junction MOSFETs from Alpha & Omega incorporate a body diode for robustness and fast reverse recovery. Based on the company’s aMOS5 technology, the AOK095A60FD (TO-247) and ...
Electronic Design

Low-Profile 1-A Rectifiers Boast 25-ns Reverse Recovery Time

A series of low-profile, surface-mount 1-A rectifiers have a 100- to 200-V voltage range and 25-ns reverse recovery time for high-frequency applications. The MUH1Px series offers designers a choice of ...